SiC

Wide bandgap power semiconductors, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), offer high power density, high efficiency, and high reliability. They demonstrate broad application potential in marine electronics. They can improve energy efficiency of ship propulsion systems and deep-sea exploration equipment, while reducing cooling requirement and adapting to harsh marine environment. They can achieve equipment miniaturization and weight reduction. They can also support power conversion and transmission for offshore wind power, as well as onshore and shipboard charging, providing advanced electronic hardware for the development of marine resources.

Wide bandgap semiconductors, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), are transforming power electronic mobility systems with their high voltage capability, high temperature tolerance, and high frequency, high efficiency performance. When used in the traction inverter of electric vehicles, they reduce power losses and improve energy efficiency, enabling around a 10% increase in driving range while also shrinking system size and weight. They can also provide 800 V high voltage fast charging platforms, which dramatically boost charging speed and ease both range and charging anxiety, making them a key driving force behind automotive electrification.

With exceptional high temperature resilience and outstanding efficiency, wide bandgap semiconductors such as SiC and GaN plays a key role in motor drive applications such as drones and eVTOL aircrafts, achieve higher performance and greater reliability.

Thanks to their high voltage capability, thermal robustness, and high frequency performance, wide bandgap semiconductors, especially Silicon Carbide (SiC) and Gallium Nitride (GaN), are essential to improving the energy efficiency of AI computing infrastructure.

Silicon Carbide (SiC) devices and Silicon-based IGBT modules are the key of modern power electronics for energy applications. With their high frequency operation, high efficiency, and high temperature capability, SiC technologies are transforming sectors such as photovoltaics and electric vehicles, reducing costs while improving performance. IGBT modules, with their superior cost-performance ratio, continue to dominate high power application scenarios. The two technologies will remain complementary over the long term, jointly enabling power system upgrades and serving as an important technological pillar for achieving carbon neutrality.

As consumer electronics continue to evolve, Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN) devices can bring unique strengths that collectively drive product innovation. Traditional Silicon devices, supported by mature manufacturing and strong cost performance balance, remain the foundation of electronic systems.

Wide bandgap semiconductors, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), are reshaping the performance of power tools. SiC devices, with their high frequency and high efficiency characteristics, can boost motor speed and torque in cordless power tools while extending runtime. GaN HEMTs, with their ultra-high switching speeds, enable compact and lightweight ultra-fast chargers that can fully charge in just 20 minutes, greatly enhancing both efficiency and user convenience.