PRODUCTS
POWER SEMICONDUCTORS
GaN
Gallium Nitride (GaN) is a wide-bandgap semiconductor material with high breakdown electric field strength and strong thermal conductivity. It is widely used in high-frequency and high-voltage power electronic devices, including fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide-bandgap semiconductor material characterized by a wide bandgap, ultra-high breakdown electric field strength, excellent thermal conductivity, and strong high-temperature resistance. Its key advantage lies in enabling highly efficient energy conversion under high-voltage, high-temperature, and high-power operating conditions.

SiC is widely used in electric vehicle power devices, photovoltaic inverters, energy storage systems, and high-temperature aerospace electronics, where reliability and performance are critical.
Si
Silicon (Si) is the most widely used semiconductor material in the world and serves as the foundation of modern electronics and the information industry. With mature manufacturing processes, excellent electrical properties, and abundant natural availability, silicon has become the essential material for integrated circuits (ICs), discrete devices, and a wide range of other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in renewable energy systems, rail transit, and other applications.
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POWER TOOLS

Chargers, Motor Drive Systems, Integrated Tool Power Supplies

REDEFINING CORDLESS POWER TOOL EXPERIENCE WITH HIGH EFFICIENCY FAST CHARGING

Wide-bandgap semiconductors, especially SiC and GaN, are transforming the performance of cordless power tools.

One of the main challenges for cordless tools is delivering stronger power output and longer operating time within the limits of a compact battery pack. SiC MOSFETs and diodes, with their high-frequency and high-efficiency characteristics, significantly increase the switching frequency of motor drive systems while reducing switching losses. This allows motors to operate at higher speeds and deliver greater torque and power, making tools more powerful and responsive. At the same time, improved power conversion efficiency helps extend battery runtime.

On the charging side, GaN HEMTs (High Electron Mobility Transistors) provide ultra-high switching speeds, making it possible to design compact, lightweight, and fast chargers. This enables significantly shorter charging times and improves both workflow efficiency and user convenience.

DESIGN RESOURCES

POWERED BY SIC/GAN TECHNOLOGY, THINKANTECH DELIVERS COMPREHENSIVE POWER CONVERSION SOLUTIONS ACROSS ALL APPLICATIONS

FEATURED PRODUCTS
X3G6515B8
X3G6515B8
650 V / 150 mΩ GaN HEMT in an ultracompact DFN8×8 package, enabling high-frequency, high-efficiency power conversion.
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X2M120075T4B
X2M120075T4B
N-channel 1200V SiC Power MOSFET
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X3USN0154X0TL3-A
X3USN0154X0TL3-A
150V / 3.4mΩ silicon MOSFET in a TOLL package, delivering high-voltage capability, low on-resistance, and efficient heat dissipation to improve power density and reliability.
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XD100DP120D4
XD100DP120D4
The 1200 V / 100 A SiC diode module adopts an SOT-227 package with a parallel topology, making it suitable for control systems and new-energy applications that operate under demanding conditions such as high temperature and high frequency.
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XI100SPRB120N4S
XI100SPRB120N4S
The 1200 V / 100 A IGBT module adopts the EconoPIM 3 package, making it suitable for medium- and high-voltage industrial control as well as new-energy applications.
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THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
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