PRODUCTS
POWER SEMICONDUCTORS
GaN
Gallium Nitride (GaN) is a wide-bandgap semiconductor material with high breakdown electric field strength and strong thermal conductivity. It is widely used in high-frequency and high-voltage power electronic devices, including fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide-bandgap semiconductor material characterized by a wide bandgap, ultra-high breakdown electric field strength, excellent thermal conductivity, and strong high-temperature resistance. Its key advantage lies in enabling highly efficient energy conversion under high-voltage, high-temperature, and high-power operating conditions.

SiC is widely used in electric vehicle power devices, photovoltaic inverters, energy storage systems, and high-temperature aerospace electronics, where reliability and performance are critical.
Si
Silicon (Si) is the most widely used semiconductor material in the world and serves as the foundation of modern electronics and the information industry. With mature manufacturing processes, excellent electrical properties, and abundant natural availability, silicon has become the essential material for integrated circuits (ICs), discrete devices, and a wide range of other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in renewable energy systems, rail transit, and other applications.
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APPLICATIONS

WITH OUR CUTTING-EDGE TECHNOLOGY IN WIDE-BANDGAP SEMICONDUCTOR CHIPS, WE PROVIDE HIGH EFFICIENCY POWER SOLUTIONS IN DIFFERENT INDUSTRIES AND HELP PRODUCT UPGRADE WITH INNOVATIVE DEVELOPMENT.
APPLICATION SOLUTIONS
DESIGN RESOURCES

THINKANTECH
WE PROVIDE SOLUTIONS IN A WIDE RANGE OF APPLICATIONS

We focus on the development of wide-bandgap semiconductor power devices and modules. Through high-frequency and high-efficiency power device design, THINKANTECH provides solutions for applications including mobility, power tools, low-altitude aviation, consumer electronics, and AI computing, while also expanding into marine electronics.
MARINE ELECTRONICS
Industrial Inverters, Servo Control Systems, Marine Power Supplies
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MOBILITY SOLUTIONS
Electric Vehicles, Electric Motorcycles, Onboard Power Supplies, Charging Stations
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LOW ALTITUDE AVIATION
With exceptional high temperature resilience and outstanding efficiency, wide bandgap semiconductors are redefining the power and control systems of drones and eVTOL aircraft. They achieve higher performance, longer endurance, and greater reliability.
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AI COMPUTING
High frequency, high efficiency wide bandgap semiconductors (SiC/GaN) are redefining power management for AI data centers. They provide a more scalable AI infrastructure with higher compute density and lower energy consumption.
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ENERGY & POWER
Adapters and Chargers, Battery Systems, Hydrogen Power Supplies, Inverters, Active Power Filters (APF), HVDC Systems, Converters, Wind Turbine Drives
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POWER TOOLS
Chargers, Motor Drive Systems, Integrated Tool Power Supplies
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CONSUMER ELECTRONICS
Chargers, Adapters, PD Fast Chargers, Smart TVs, Mobile Devices, Smart Wearables, Drones
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DESIGN RESOURCES

THINKANTECH focuses on SiC/GaN technologies, covering the full spectrum of power conversion applications
FEATURED PRODUCTS
X3G6503ATL
X3G6503ATL
TOLT-packaged 650 V / 30 mΩ GaN HEMT, providing an ideal solution for high-efficiency fast chargers and server power supplies.
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XM17001KT4
XM17001KT4
1700V 5A SiC Power MOSFET
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XUS010N1X3TL3
XUS010N1X3TL3
100V / 1.3mΩ silicon MOSFET in a TOLL package, featuring ultra-low on-resistance for exceptionally high power density and efficiency
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XS060SPRB065N1
XS060SPRB065N1
The 650 V / 60 mΩ SiC MOSFET power module adopts the Easy1B package with a PIM topology, making it suitable for control systems and new-energy applications operating under harsh high-temperature and high-frequency conditions.
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XI50SPRB065N8S
XI50SPRB065N8S
The 650 V / 50 A IGBT module adopts the EconoPIM 2 package, making it suitable for medium- and high-voltage industrial control as well as new-energy applications.
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THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE-BANDGAP SEMICONDUCTORS
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