PRODUCTS
POWER SEMICONDUCTORS
GaN
Gallium Nitride (GaN) is a wide-bandgap semiconductor material with high breakdown electric field strength and strong thermal conductivity. It is widely used in high-frequency and high-voltage power electronic devices, including fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide-bandgap semiconductor material characterized by a wide bandgap, ultra-high breakdown electric field strength, excellent thermal conductivity, and strong high-temperature resistance. Its key advantage lies in enabling highly efficient energy conversion under high-voltage, high-temperature, and high-power operating conditions.

SiC is widely used in electric vehicle power devices, photovoltaic inverters, energy storage systems, and high-temperature aerospace electronics, where reliability and performance are critical.
Si
Silicon (Si) is the most widely used semiconductor material in the world and serves as the foundation of modern electronics and the information industry. With mature manufacturing processes, excellent electrical properties, and abundant natural availability, silicon has become the essential material for integrated circuits (ICs), discrete devices, and a wide range of other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in renewable energy systems, rail transit, and other applications.
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MOBILITY SOLUTIONS

Electric Vehicles, Electric Motorcycles, Onboard Power Supplies, Charging Stations

HIGH EFFICIENCY FAST CHARGING FOR NEXT GENERATION E-MOBILITY

Wide-bandgap semiconductors, including SiC and GaN, are transforming power electronics in electric mobility due to their high-voltage capability, thermal stability, and high-frequency performance.

Their primary applications include traction inverters and energy systems. SiC power modules used in traction inverters help reduce switching and conduction losses, improving overall conversion efficiency. This enhances drivetrain performance, reduces system size and weight, and can also extend electric vehicle driving range.

In charging systems, SiC devices support the development of 800V high-voltage fast-charging platforms. Both onboard chargers (OBCs) and DC fast-charging stations benefit from higher switching frequencies, lower thermal stress, and increased power density. These advantages improve charging speed and overall system efficiency.

By improving energy efficiency and charging performance, wide-bandgap semiconductors help address key challenges in electric vehicles and support the continued transition toward vehicle electrification.

DESIGN RESOURCES

POWERED BY SIC/GAN TECHNOLOGY, THINKANTECH DELIVERS COMPREHENSIVE POWER CONVERSION SOLUTIONS ACROSS ALL APPLICATIONS

FEATURED PRODUCTS
X3G65045ATL
X3G65045ATL
TOLT-packaged 650 V / 45 mΩ GaN HEMT, providing an ideal solution for high-efficiency fast chargers and server power supplies.
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X3M120040H
X3M120040H
N-channel 1200V SiC Power MOSFET
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XUS010N003D2A
XUS010N003D2A
100V / 3mΩ silicon MOSFET in a TO-263 package, featuring ultra-low Rds(on) for high-efficiency power conversion and high power density.
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XS003HB120N6
XS003HB120N6
The 1200 V / 3 mΩ SiC MOSFET half-bridge module adopts the Easy3B package and is suitable for control systems and new-energy applications operating under harsh high-temperature, high-frequency conditions.
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XI15SPRB120N1S
XI15SPRB120N1S
The 1200 V / 15 A IGBT module adopts the compact Easy1B package and a PIM topology, making it suitable for medium- and high-voltage industrial control as well as new-energy applications.
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THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
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