PRODUCTS
POWER SEMICONDUCTORS
GaN
Gallium Nitride (GaN) is a wide-bandgap semiconductor material with high breakdown electric field strength and strong thermal conductivity. It is widely used in high-frequency and high-voltage power electronic devices, including fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide-bandgap semiconductor material characterized by a wide bandgap, ultra-high breakdown electric field strength, excellent thermal conductivity, and strong high-temperature resistance. Its key advantage lies in enabling highly efficient energy conversion under high-voltage, high-temperature, and high-power operating conditions.

SiC is widely used in electric vehicle power devices, photovoltaic inverters, energy storage systems, and high-temperature aerospace electronics, where reliability and performance are critical.
Si
Silicon (Si) is the most widely used semiconductor material in the world and serves as the foundation of modern electronics and the information industry. With mature manufacturing processes, excellent electrical properties, and abundant natural availability, silicon has become the essential material for integrated circuits (ICs), discrete devices, and a wide range of other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in renewable energy systems, rail transit, and other applications.
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ENERGY & POWER

Adapters and Chargers, Battery Systems, Hydrogen Power Supplies, Inverters, Active Power Filters (APF), HVDC Systems, Converters, Wind Turbine Drives.

JOINTLY ADVANCING HIGH-EFFICIENCY POWER ELECTRONICS TO BUILD THE FOUNDATION FOR A CARBON-NEUTRAL FUTURE

SiC MOSFETs, diodes, IPMs, and silicon IGBT modules are key technologies in modern energy and power electronics.

SiC devices offer high-frequency operation, high efficiency, and excellent thermal performance, enabling significant improvements in renewable energy systems. In photovoltaic and energy storage inverters, SiC MOSFETs and diodes can achieve efficiency above 99%, improving overall power generation performance. In electric vehicle systems, SiC modules help extend driving range and support fast charging. They also reduce power losses and system size in chargers, smart grid equipment, and industrial motor drives.

IGBT modules, with their mature technology and cost advantages in high-voltage and high-current applications, remain widely used in high-power sectors such as HVDC systems, rail transportation, and wind power converters.

In the future, SiC and IGBT technologies will continue to complement each other, supporting the development of energy systems toward higher efficiency, greater reliability, and more compact designs, while contributing to long-term carbon neutrality goals.

DESIGN RESOURCES

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FEATURED PRODUCTS
X3G6509B8
X3G6509B8
650 V / 90 mΩ GaN HEMT in an ultracompact DFN8×8 package, enabling high-frequency, high-efficiency power conversion.
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XD6504D
XD6504D
650V 4A SiC Schottky Barrier Diode
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XUS15004NTL4
XUS15004NTL4
150V / 3.9mΩ silicon MOSFET in a TOLL package, delivering high-voltage capability, low on-resistance, and efficient heat dissipation to improve power density and reliability.
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XS040SPRB120N2
XS040SPRB120N2
The 1200 V / 40 mΩ SiC MOSFET power module adopts the Easy2B package with a PIM topology, making it suitable for control systems and new-energy applications that operate under demanding high-temperature and high-frequency conditions.
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XI75SPRB120N8S
XI75SPRB120N8S
The 1200 V / 75 A IGBT power module adopts the EconoPIM 2 package, making it suitable for medium- and high-voltage industrial control as well as new-energy applications.
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