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GaN
Gallium Nitride (GaN)
A HIGH-PERFORMANCE WIDE BANDGAP SEMICONDUCTOR MATERIAL
As a key material of wide bandgap semiconductors, Gallium Nitride (GaN) stands out with its exceptional electrical properties, strong physical stability, and broad application adaptability. Its characteristic advantages can be categorized as follows:
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WIDE BAND GAP
With a bandgap of around 3.4 eV (vs. silicon’s 1.12 eV), GaN can withstand significantly higher voltages and temperatures. This makes it resistant to high energy particle impact and ideal for extreme environments such as aerospace and nuclear electronics.
HIGH BREAKDOWN ELECTRIC FIELD
GaN’s breakdown field strength reaches around 3.3 MV/cm, which is over ten times that of silicon. For the same voltage rating, GaN devices can be made much thinner and more compact, delivering higher power density. This is crucial for miniaturized power modules in electric vehicles.
HIGH THERMAL CONDUCTIVITY
With thermal conductivity of 130–200 W/(m·K) (higher than silicon and competitive with SiC), GaN offers excellent heat dissipation. This minimizes thermal degradation and extends component lifetime—beneficial for fast chargers and server power supplies.
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HIGH ELECTRON MOBILITY
The electron mobility of GaN material is 2000 cm²/(V·s), which is three times that of silicon. The high electron mobility enables much faster electron transport. GaN devices achieve ultra-high switching frequencies (in MHz level), making them ideal for high frequency communications such as 5G RF power amplifiers and satellite communication modules.
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LOW CONDUCTION LOSS
GaN devices—especially HEMTs—feature extremely low on-resistance, reducing conduction losses and significantly improving energy-conversion efficiency. In PV inverters and energy-storage systems, GaN helps push system efficiency above 99%.
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HIGH FREQUENCY OPERATION& RADIATION RESISTANCE
GaN’s wide bandgap characteristic provides high resistance to radiation. GaN material is not prone to performance degradation caused by radiation exposure. This makes it indispensable in radar systems, aerospace communication modules, and other demanding RF applications.
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APPLICATIONS
WE EMPOWER A WORLD OF HIGH ENERGY EFFICIENCY WITH OUR CUTTING-EDGE TECHNOLOGY, DRIVING SUSTAINABLE PROGRESS FOR HUMANITY.
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Wide bandgap power semiconductors, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), offer high power density, high efficiency, and high reliability. They demonstrate broad application potential in marine electronics. They can improve energy efficiency of ship propulsion systems and deep-sea exploration equipment, while reducing cooling requirement and adapting to harsh marine environment. They can achieve equipment miniaturization and weight reduction. They can also support power conversion and transmission for offshore wind power, as well as onshore and shipboard charging, providing advanced electronic hardware for the development of marine resources.
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Wide bandgap semiconductors, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), are transforming power electronic mobility systems with their high voltage capability, high temperature tolerance, and high frequency, high efficiency performance. When used in the traction inverter of electric vehicles, they reduce power losses and improve energy efficiency, enabling around a 10% increase in driving range while also shrinking system size and weight. They can also provide 800 V high voltage fast charging platforms, which dramatically boost charging speed and ease both range and charging anxiety, making them a key driving force behind automotive electrification.
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With exceptional high temperature resilience and outstanding efficiency, wide bandgap semiconductors such as SiC and GaN plays a key role in motor drive applications such as drones and eVTOL aircrafts, achieve higher performance and greater reliability.
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Thanks to their high voltage capability, thermal robustness, and high frequency performance, wide bandgap semiconductors, especially Silicon Carbide (SiC) and Gallium Nitride (GaN), are essential to improving the energy efficiency of AI computing infrastructure.
Silicon Carbide (SiC) devices and Silicon-based IGBT modules are the key of modern power electronics for energy applications. With their high frequency operation, high efficiency, and high temperature capability, SiC technologies are transforming sectors such as photovoltaics and electric vehicles, reducing costs while improving performance. IGBT modules, with their superior cost-performance ratio, continue to dominate high power application scenarios. The two technologies will remain complementary over the long term, jointly enabling power system upgrades and serving as an important technological pillar for achieving carbon neutrality.
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As consumer electronics continue to evolve, Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN) devices can bring unique strengths that collectively drive product innovation. Traditional Silicon devices, supported by mature manufacturing and strong cost performance balance, remain the foundation of electronic systems.
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Wide bandgap semiconductors, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), are reshaping the performance of power tools. SiC devices, with their high frequency and high efficiency characteristics, can boost motor speed and torque in cordless power tools while extending runtime. GaN HEMTs, with their ultra-high switching speeds, enable compact and lightweight ultra-fast chargers that can fully charge in just 20 minutes, greatly enhancing both efficiency and user convenience.
