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寄生电容: GaN和硅超结MOS对比
Release date:2023-04-13 Writer: Category:Technical Article Views:541次
  • 氮化镓 HEMT: Coss随VDS电压的变化率: Coss(Vds=0.5V)/Coss(Vds=500V)=200pF/41pF=4.89
  • 硅超结MOS: Coss 随VDS电压的变化率: Coss(Vds=0.5V)/Coss(Vds=500V)=3.5E4pF/40pF=875
  • 硅超结MOS Coss随VDS电压的变化率比氮化镓大很多，造成严重的非线性，导致EMI整改困难

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