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Home
Products
GaN HEMT
GaN Module
SiC SBD
SiC MOS
SiC Module
Application
5G Communication Power Supply
E-Bike
Charging Pile
Household / Industrial and Commercial Energy Storage
PD Fast Charge
Industrial / Plant Lighting
PV Inverter / Micro Inverter
Server Power
BEV
Manufacturing
News
Company News
Industry News
Technical Article
About us
Company profile
Company culture
Development path
Office address
Core team
Honor
Future direction
Contact us
Contact us
Career
Product center
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GaN HEMT
GaN Module
SiC SBD
SiC MOS
SiC Module
Package
TO247-3L
TO247-4L
P/N
N
V(BR)DSS (V)
1200
1700
VGS(th) Max (V)
-10/+25
-8/+22
ID (A) Tc=25℃
32
35
5.0
70
Vth_typ (V)
2.4
2.6
RDS(on) (Ω)
1.0
40m
75m
80m
Out Capacitance (pF)
112
13
67
94
Qg (nC)
103
121
23
79
