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Technical Article
高dv/dt造成的误开通
Release date:2023-04-13
Writer:
Category:Technical Article
Views:504次
高dv/dt会给寄生电容充电
在此期间:CDS 、CGD 以及CGS 都被充电
如果CGS充电后的电压高过阈值电压,器件可能会被误开通。这样不仅会降低效率,还可能烧毁器件。这样的现象被称为米勒开通
需要一个驱动旁路分流流过米勒电容的电流以防止器件误开通
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电流崩塌效应(动态电阻)原理浅释
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为何没有P型 GaN HEMT?
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