Home
Products
GaN HEMT
GaN Module
SiC SBD
SiC MOS
SiC Module
Application
5G Communication Power Supply
E-Bike
Charging Pile
Household / Industrial and Commercial Energy Storage
PD Fast Charge
Industrial / Plant Lighting
PV Inverter / Micro Inverter
Server Power
BEV
Manufacturing
News
Company News
Industry News
Technical Article
About us
Company profile
Company culture
Development path
Office address
Core team
Honor
Future direction
Contact us
Contact us
Career
简体中文
English
X
Home
Products
GaN HEMT
GaN Module
SiC SBD
SiC MOS
SiC Module
Application
5G Communication Power Supply
E-Bike
Charging Pile
Household / Industrial and Commercial Energy Storage
PD Fast Charge
Industrial / Plant Lighting
PV Inverter / Micro Inverter
Server Power
BEV
Manufacturing
News
Company News
Industry News
Technical Article
About us
Company profile
Company culture
Development path
Office address
Core team
Honor
Future direction
Contact us
Contact us
Career
The current location:
Home
/
News
/
Technical Article
硅超结 MOS Cds 非线性问题研究
Release date:2023-04-12
Writer:
Category:Technical Article
Views:520次
Prev:
氮化镓DFN封装散热
Next:
氮化镓通态电阻Rdson随Vgs的变化
Contact us
Tel:+86-025-51180705
Email:xinkansen@x-ipm.com
WeChat public account:X-IPM Technologies
Consultation
Consult now