PRODUCTS
POWER SEMICONDUCTORS
GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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SiC Schottky Barrier Diodes feature zero reverse recovery and high voltage, high frequency capability (>1700V), reducing switching loss by up to 85%. They are offered in discrete packages such as TO and DFN. They are well suited for EV onboard chargers (OBC), photovoltaic inverters, and charging stations, significantly improving efficiency and power density.
SiC Schottky Barrier Diodes feature zero reverse recovery and high voltage, high frequency capability (>1700V), reducing switching loss by up to 85%. They are offered in discrete packages such as TO and DFN. They are well suited for EV onboard chargers (OBC), photovoltaic inverters, and charging stations, significantly improving efficiency and power density.
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