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GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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XD100DP120D4

XD100DP120D4

Available
The 1200 V / 100 A SiC diode module adopts an SOT-227 package with a parallel topology, making it suitable for control systems and new-energy applications that operate under demanding conditions such as high temperature and high frequency.
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OVERVIEW
The 1200 V / 100 A SiC diode module adopts an SOT-227 package with a parallel topology, offering high power density and excellent current-sharing characteristics. Its high efficiency, low losses, and strong high-temperature stability significantly enhance the efficiency, power density, and reliability of industrial power supplies, new-energy inverters, and high-speed rectifier systems.
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PARAMETERS
VDS[V]
1200
R[mΩ]/I[A]
100
Topology
SBD
Package
D4
Status
Available
FEATURES
  • High temperature stability
    ​​​​High temperature stability
    Higher operating junction temperature enables increased power density, with TJ ratings exceeding 175 °C
  • Low thermal resistance design
    ​​​​Low thermal resistance design
    Copper baseplate and AlN ceramic materials provide significantly lower thermal resistance
  • Low switching losses
    ​​​​Low switching losses
    Fast switching with low losses, enabling higher efficiency and reduced thermal demands
APPLICATIONS
The 1200 V / 100 A SiC diode module adopts an SOT-227 package with a parallel topology, offering high integration. It is particularly well-suited for industrial power supplies, new-energy inverters, and high-speed rectifier systems. With excellent surge-current capability, it reliably meets the demands of a wide range of complex operating conditions.
High-frequency switching applications
Photovoltaic and energy-storage inverters
Uninterruptible power supply (UPS) systems
High-speed rectifiers
THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
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