XS013SS120D4
Available
The 1200 V / 13 mΩ SiC MOSFET single-switch power module adopts an SOT-227 package, making it suitable for control systems and new-energy applications operating under harsh high-temperature and high-frequency conditions.
OVERVIEW
The 1200 V / 13 mΩ SiC MOSFET power module adopts an SOT-227 package, featuring ultra-low parasitic inductance and excellent thermal performance. Its high-frequency switching capability and low switching losses significantly improve system efficiency, making it suitable for photovoltaic inverters, EV charging stations, and industrial power supplies in medium- to high-power applications. It enables compact, high-efficiency system designs.
PARAMETERS
VDS[V]
1200
R[mΩ]/I[A]
13
Topology
Single
Package
D4
Status
Available
FEATURES
-
High frequency applicationsLow parasitic capacitance enables high-speed switching with low switching losses, making it ideal for high-frequency applications -
Low switching lossesFast switching with low losses, enabling higher efficiency and reduced thermal demands -
Low parasitic inductancesMinimized loop-area design reduces module stray inductance to the lowest level -
High temperature stabilityHigher operating junction temperature enables increased power density, with TJ ratings exceeding 175 °C
APPLICATIONS
The 1200 V / 13 mΩ SiC MOSFET module adopts an SOT-227 package and a single-switch topology, offering flexible series and parallel configuration options. Its high-frequency, high-efficiency performance significantly enhances the power density and efficiency of photovoltaic inverters, EV charging stations, and industrial power supplies, while accommodating diverse topology requirements.
High-frequency switching applications
Photovoltaic and energy-storage inverters
Uninterruptible power supply (UPS) systems
