XS003HB120N6
Available
The 1200 V / 3 mΩ SiC MOSFET half-bridge module adopts the Easy3B package and is suitable for control systems and new-energy applications operating under harsh high-temperature, high-frequency conditions.
OVERVIEW
The 1200 V / 3 mΩ SiC MOSFET half-bridge module adopts the Easy3B package and features a fully symmetrical circuit design that achieves ultra-low loop stray inductance and switching losses, enabling stable high-frequency, high-efficiency operation. Its high power density and excellent thermal performance significantly enhance the efficiency and power density of photovoltaic inverters, industrial power supplies, and similar systems, while also reducing size and lowering overall system cost.
PARAMETERS
VDS[V]
1200
R[mΩ]/I[A]
3
Topology
Half-bridge
Package
N6
Status
Available
FEATURES
-
High frequency applicationsLow parasitic capacitance enables high-speed switching with low switching losses, making it ideal for high-frequency applications -
Low switching lossesFast switching with low losses, enabling higher efficiency and reduced thermal demands -
High temperature stabilityHigher operating junction temperature enables increased power density, with TJ ratings exceeding 175 °C
APPLICATIONS
The 1200 V / 3 mΩ SiC MOSFET half-bridge module adopts the Easy3B package, featuring a fully symmetrical electrical layout and Kelvin-source connections. It delivers high-efficiency, high–power-density solutions for photovoltaic inverters, energy-storage systems, and industrial drives, while reducing peripheral system costs to achieve superior overall cost performance.
High-frequency switching applications
Photovoltaic and energy-storage inverters
Uninterruptible power supply (UPS) systems
