XS060SPRB065N1
Available
The 650 V / 60 mΩ SiC MOSFET power module adopts the Easy1B package with a PIM topology, making it suitable for control systems and new-energy applications operating under harsh high-temperature and high-frequency conditions.
OVERVIEW
The 650 V / 60 mΩ SiC MOSFET power module adopts the Easy1B package with a PIM topology, integrating rectification, braking, and three-phase inverter functions. Leveraging SiC technology, it delivers outstanding high-frequency, high-efficiency performance with low switching losses, significantly enhancing system power density and reliability. It is ideal for compact, high-performance applications such as servo drives and industrial inverters, helping to simplify system design while improving overall energy efficiency.
PARAMETERS
VDS[V]
650
R[mΩ]/I[A]
60
Topology
PIM
Package
N1
Status
Available
FEATURES
-
High temperature stabilityHigher operating junction temperature enables increased power density, with TJ ratings exceeding 175 °C -
Low switching lossesFast switching with low losses, enabling higher efficiency and reduced thermal demands -
High frequency applicationsLow parasitic capacitance enables high-speed switching with low switching losses, making it ideal for high-frequency applications
APPLICATIONS
The 650 V / 60 mΩ SiC MOSFET power module adopts the Easy1B package with an integrated PIM topology. Featuring Kelvin-source connections and high-frequency, high-efficiency performance, it significantly enhances the power density and energy efficiency of photovoltaic energy storage systems, industrial motor drives, and industrial inverters. It also helps reduce overall system cost, providing a highly cost-effective solution for equipment upgrades.
High-frequency switching applications
Photovoltaic and energy-storage inverters
Uninterruptible power supply (UPS) systems
