XS040SPRB120N2
Available
The 1200 V / 40 mΩ SiC MOSFET power module adopts the Easy2B package with a PIM topology, making it suitable for control systems and new-energy applications that operate under demanding high-temperature and high-frequency conditions.
OVERVIEW
The 1200 V / 40 mΩ SiC MOSFET power module adopts the Easy 2B package with a PIM topology, integrating rectification, braking, and three-phase inverter functions. Leveraging SiC technology, it delivers outstanding high-frequency, high-efficiency performance with low switching losses, significantly enhancing system power density and reliability. It is ideal for compact, high-performance applications such as servo drives and industrial inverters, helping to simplify system design while improving overall energy efficiency.
PARAMETERS
VDS[V]
1200
R[mΩ]/I[A]
40
Topology
PIM
Package
N2
Status
Available
FEATURES
-
High frequency applicationsLow parasitic capacitance enables high-speed switching with low switching losses, making it ideal for high-frequency applications -
Low switching lossesFast switching with low losses, enabling higher efficiency and reduced thermal demands -
High temperature stabilityHigher operating junction temperature enables increased power density, with TJ ratings exceeding 175 °C
APPLICATIONS
The 1200 V / 40 mΩ SiC MOSFET power module adopts the Easy2B package with an integrated PIM topology. Featuring Kelvin-source connections and high-frequency, high-efficiency performance, it significantly enhances power density and energy efficiency in photovoltaic energy storage systems, industrial motor drives, and industrial inverters. At the same time, it helps reduce overall system cost, providing a cost-effective solution for equipment upgrades.
High-frequency switching applications
Photovoltaic and energy-storage inverters
Uninterruptible power supply (UPS) systems
