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GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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XUS010N1X3TL3

XUS010N1X3TL3

Available
100V / 1.3mΩ silicon MOSFET in a TOLL package, featuring ultra-low on-resistance for exceptionally high power density and efficiency
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
This 100 V / 1.3 mΩ silicon MOSFET adopts a TOLL package, offering extremely low on-resistance and excellent thermal performance. Its low parasitic inductance helps improve EMI performance. Compared with TO-263, the TOLL package reduces PCB area by approximately 30% and thickness by 50%, supporting high–power-density designs. This device is ideal for EV DC-DC converters, battery management systems, and high-efficiency server power supplies, effectively enhancing system efficiency and reliability.
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PARAMETERS
VDS[V]
100
IDS[A]@25℃
325
VGS-max [V]
±20
VGS(th)[V] @25℃
3.1
RDS(on)[mΩ] @VGS=10V
1.3
Qg[nC]
137
Package
TOLL
Status
Available
FEATURES
  • Low switching losses
    ​​​​Low switching losses
    Optimized gate-charge design minimizes switching losses
  • Extremely low conduction losses
    ​​​​Extremely low conduction losses
    Low RDS(on) minimizes conduction losses.
  • Excellent robustness
    ​​​​Excellent robustness
    Fully avalanche-tested; RoHS compliant for robust performance
APPLICATIONS
This 100V / 1.3mΩ ultra–low-RDS(on) silicon MOSFET in a TOLL package combines high-frequency efficiency with excellent thermal performance. It enhances power density and reliability in server power supplies, power tools, and automotive systems while optimizing overall system cost.
Hard-switching and high-speed circuits
Synchronous rectification in SMPS
DC/DC converters for telecom and industrial applications
THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
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