XUS010N003D2A
Available
100V / 3mΩ silicon MOSFET in a TO-263 package, featuring ultra-low Rds(on) for high-efficiency power conversion and high power density.
OVERVIEW
This 100 V / 3 mΩ silicon MOSFET adopts a TO-263 package and features extremely low on-resistance and excellent switching performance, significantly reducing power loss and temperature rise while improving system efficiency. The package offers strong thermal capability and space efficiency, making it suitable for high–power-density applications. It is widely used in server power supplies, motor drives, DC-DC converters, and battery management systems, meeting the requirements for high efficiency and high reliability.
PARAMETERS
VDS[V]
100
IDS[A]@25℃
180
VGS-max [V]
±25
VGS(th)[V] @25℃
3
RDS(on)[mΩ] @VGS=10V
3
Qg[nC]
110
Package
TO-263
Status
Available
FEATURES
-
Low switching lossesOptimized gate-charge design minimizes switching losses -
Excellent robustnessFully avalanche-tested; RoHS compliant for robust performance -
Extremely low conduction lossesLow RDS(on) minimizes conduction losses.
APPLICATIONS
This 100V / 3mΩ silicon MOSFET in a TO-263 package delivers extremely low conduction loss. It is ideal for high-efficiency, high–power-density applications such as telecom power supplies and motor drives. With industrial-grade reliability and highly competitive cost, it enhances overall system performance.
Hard-switching and high-speed circuits
Synchronous rectification in SMPS
DC/DC converters for telecom and industrial applications
