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Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
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SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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XUS010N3X6D2A

XUS010N3X6D2A

Available
100V / 3.6mΩ silicon MOSFET in a TO-263 package, featuring ultra-low Rds(on) for high-efficiency power conversion and high power density.
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
This 100 V / 3.6 mΩ silicon MOSFET adopts a TO-263 package and features extremely low on-resistance and excellent switching performance, significantly reducing power loss and temperature rise while improving system efficiency. The package offers strong thermal capability and space efficiency, making it suitable for high–power-density applications. It is widely used in server power supplies, motor drives, DC-DC converters, and battery management systems, meeting the requirements for high efficiency and high reliability.
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PARAMETERS
VDS[V]
100
IDS[A]@25℃
130
VGS-max [V]
±20
VGS(th)[V] @25℃
3
RDS(on)[mΩ] @VGS=10V
3.6
Qg[nC]
91
Package
TO-263
Status
Available
FEATURES
  • Extremely low conduction losses
    ​​​​Extremely low conduction losses
    Low RDS(on) minimizes conduction losses.
  • Excellent robustness
    ​​​​Excellent robustness
    Fully avalanche-tested; RoHS compliant for robust performance
  • Low switching losses
    ​​​​Low switching losses
    Optimized gate-charge design minimizes switching losses
APPLICATIONS
This 100V/3.6mΩ silicon MOSFET in a TO-263 package offers extremely low conduction loss. It is ideal for high-efficiency, high-power-density applications such as telecommunications power supplies and motor drives. With industrial-grade reliability and highly competitive cost, it significantly enhances overall system performance.
Hard-switching and high-speed circuits
Synchronous rectification in SMPS
DC/DC converters for telecom and industrial applications
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