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GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
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SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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XUS15004NTL4

XUS15004NTL4

Available
150V / 3.9mΩ silicon MOSFET in a TOLL package, delivering high-voltage capability, low on-resistance, and efficient heat dissipation to improve power density and reliability.
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
The 50 V / 3.9 mΩ N-channel MOSFET adopts a TOLL package, featuring ultra-low on-resistance (3.9 mΩ) and a 150 V voltage rating, significantly reducing conduction losses and improving efficiency. Its fast switching capability makes it ideal for high-frequency circuits, while the excellent thermal design supports continuous high-current operation (up to 180 A). This device is widely used in motor drives, BMS battery management systems, photovoltaic inverters, and automotive DC-DC converters, meeting the stringent requirements of high power density and reliability.
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PARAMETERS
VDS[V]
150
IDS[A]@25℃
295
VGS-max [V]
±25
VGS(th)[V] @25℃
3
RDS(on)[mΩ] @VGS=10V
3.9
Qg[nC]
143
Package
TOLL
Status
Available
FEATURES
  • Low switching losses
    ​​​​Low switching losses
    Optimized gate-charge design minimizes switching losses
  • Extremely low conduction losses
    ​​​​Extremely low conduction losses
    Low RDS(on) minimizes conduction losses.
  • Excellent robustness
    ​​​​Excellent robustness
    Fully avalanche-tested; RoHS compliant for robust performance
APPLICATIONS
This 150V / 3.9mΩ silicon MOSFET adopts a TOLL package, delivering extremely low Rds(on) for high efficiency and excellent thermal performance. It is particularly suited for server power supplies, power tools, and industrial motor drives, helping to boost power density while optimizing system cost and reliability.
Hard-switching and high-speed circuits
Synchronous rectification in SMPS
DC/DC converters for telecom and industrial applications
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