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GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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XUS15004ND2A

XUS15004ND2A

Available
150V rating, 4.2mΩ ultra-low Rds(on), TO-263 package. High efficiency and high power density, suitable for power supplies and motor drives
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
This 150 V / 4.2 mΩ silicon MOSFET adopts a TO-263 package, offering low conduction resistance and excellent thermal performance for highly efficient power conversion. Its high switching speed helps reduce the size of energy-storage components such as inductors and transformers. The device is well-suited for industrial power supplies, motor drives, DC-DC converters, and on-board power systems in new-energy vehicles, effectively enhancing system power density and overall reliability.
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PARAMETERS
VDS[V]
150
IDS[A]@25℃
195
VGS-max [V]
±25
VGS(th)[V] @25℃
3
RDS(on)[mΩ] @VGS=10V
4.2
Qg[nC]
148
Package
TO-263
Status
Available
FEATURES
  • Extremely low conduction losses
    ​​​​Extremely low conduction losses
    Low RDS(on) minimizes conduction losses.
  • Excellent robustness
    ​​​​Excellent robustness
    Fully avalanche-tested; RoHS compliant for robust performance
  • Low switching losses
    ​​​​Low switching losses
    Optimized gate-charge design minimizes switching losses
APPLICATIONS
150V / 4.2mΩ silicon MOSFET in a TO-263 package, combining high voltage capability with ultra-low conduction loss. It enhances efficiency and power density in server power supplies and motor drives, offering excellent cost performance and helping customers reduce overall system cost.
Hard-switching and high-speed circuits
Synchronous rectification in SMPS
DC/DC converters for telecom and industrial applications
THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
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