X3USN0154X0TL3-A
Available
150V / 3.4mΩ silicon MOSFET in a TOLL package, delivering high-voltage capability, low on-resistance, and efficient heat dissipation to improve power density and reliability.
OVERVIEW
The 50 V / 3.4 mΩ N-channel MOSFET adopts a TO-263 package and features an ultra-low on-resistance (3.9 mΩ) with a 150 V voltage rating, significantly reducing conduction losses and improving efficiency. Its fast switching capability makes it suitable for high-frequency circuits, while the optimized thermal design supports continuous high-current operation (up to 180 A). It is widely used in motor drives, BMS battery management, photovoltaic inverters, and automotive DC-DC converters, meeting the demands for high power density and high reliability.
PARAMETERS
VDS[V]
150
IDS[A]@25℃
250
VGS-max [V]
±20
VGS(th)[V] @25℃
3.2
RDS(on)[mΩ] @VGS=10V
3.4
Qg[nC]
43
Package
TOLL
Status
Available
FEATURES
-
Extremely low conduction lossesLow RDS(on) minimizes conduction losses. -
Excellent robustnessFully avalanche-tested; RoHS compliant for robust performance -
Low switching lossesOptimized gate-charge design minimizes switching losses
APPLICATIONS
This 150V / 3.4mΩ silicon MOSFET adopts a TOLL package, offering extremely low Rds(on) for high efficiency and excellent thermal performance. It is particularly suitable for server power supplies, power tools, and industrial motor drives, helping to increase power density while optimizing system cost and reliability.
Hard-switching and high-speed circuits
Synchronous rectification in SMPS
DC/DC converters for telecom and industrial applications
