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POWER SEMICONDUCTORS
GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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XD6504D

XD6504D

Available
650V 4A SiC Schottky Barrier Diode
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
This 650 V / 6 A silicon carbide Schottky diode adopts a DFN5×6 package and features zero reverse-recovery current and low switching losses. With a maximum junction temperature of 175 °C and support for high-frequency operation, it significantly improves power density and efficiency. It is particularly suitable for high-frequency PFC circuits, fast-charging adapters, and server/telecom power supplies, where thermal performance and space constraints are critical.
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PARAMETERS
VDS [V]
650
IF[A]@150℃
12
VF[V]
1.5
IFSM[A]
35
j i²dt [A²s]
5.8
QC[nC]
12
Package
TO-252-2L
Reliability
Industrial-grade
Status
Available
FEATURES
  • High breakdown voltage
    ​​​​High breakdown voltage
    High breakdown voltageenabled by SiC’s high critical electric field, supporting device ratings from several kV to tens of kV
  • No reverse recovery
    ​​​​No reverse recovery
    Unipolar conduction with no reverse recovery in SiC SBD
  • High inrush current
    ​​​​High inrush current
    The high thermal conductivity of SiC enables devices to withstand large surge currents under extreme operating conditions
APPLICATIONS
This 650 V / 6 A silicon carbide diode adopts a compact DFN5×6 package and delivers outstanding high-frequency, high-efficiency, and high-temperature performance. It is widely used in server power supplies, photovoltaic inverters, and new-energy EV charging stations, helping to enhance system power density and reliability while optimizing overall cost.
Switch-mode power supply (SMPS)
Power factor correction (PFC)
Motor drive and traction
EV charger
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