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POWER SEMICONDUCTORS
GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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XD065A0065

XD065A0065

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650V SiC Schottky Barrier Diode
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
This 650 V / 4 A silicon carbide Schottky diode adopts a DFN5×6 package and features zero reverse-recovery current and low switching losses. With a maximum junction temperature of 175 °C and support for high-frequency operation, it significantly enhances power density and efficiency. It is particularly suited for high-frequency PFC circuits, fast-charging adapters, and server/telecom power supplies, where thermal performance and space constraints are critical.
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PARAMETERS
VDS [V]
650
IF[A]@150℃
6
VF[V]
1.27
IFSM[A]
52
QC[nC]
17
Package
DFN5*6
Reliability
Industrial-grade
Status
Available
FEATURES
  • Low loss design
    ​​​​Low loss design
    SiC material properties significantly reduce conduction losses, greatly improving energy efficiency
  • High temperature stability
    ​​​​High temperature stability
    The high thermal conductivity of SiC enables devices to withstand large surge currents under extreme operating conditions
  • High frequency properties
    ​​​​High frequency properties
    Supports high switching frequencies (up to 200 kHz and above), reducing switching losses
APPLICATIONS
This product series has already been deployed in high-end applications such as AI server power supplies and industrial inverters, driving the replacement of imported solutions with domestically produced SiC devices.
Industrial motor drives
Power systems
New energy equipment
Special-purpose power supplies
THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
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