X3M120040H

X3M120040H

Available
N-channel 1200V SiC Power MOSFET
OVERVIEW
ThinkAntech's SiC MOSFET family adopts industry-leading silicon carbide technology, delivering higher channel mobility and lower on-resistance, while offering exceptional switching performance and reliability that exceeds automotive-grade requirements. Its key advantages include: High-frequency switching capability, significantly reducing the size of passive components. Higher operating junction temperature, enabling higher power density. Ultra-low switching and conduction losses, helping systems achieve superior efficiency. Covering a wide voltage range, this product series is ideal for high-voltage and high-efficiency applications such as NEV traction inverters, OBCs, PV inverters, industrial power supplies, and data-center servers.
PARAMETERS
VDS [V]
1200
IDS[A] @25°C
64
VGS-max [V]
-8/+22
VGS(th)[V] @25°C
2.6
RDS(on)[mΩ] @VGS=18V
40
Qg[nC]
100
Package
TO-247-4
Reliability
Industrial-grade
Status
Available
FEATURES
  • Easy Paralleling and Simple Drive Requirements
    ​​​​Easy Paralleling and Simple Drive Requirements
    Supports convenient device paralleling with straightforward driving, offering flexible design options and high reliability.
  • TO-247-16 Package
    ​​​​TO-247-16 Package
    Features a dedicated Kelvin source to suppress gate oscillation; the four-lead design enhances high-frequency performance.
  • Low On-Resistance
    ​​​​Low On-Resistance
    Reduced Rds(on) minimizes heat generation, significantly improves energy efficiency, and lowers cooling requirements
  • High-Speed Switching and Low Capacitance
    ​​​​High-Speed Switching and Low Capacitance
    Fast switching with low parasitic capacitance reduces switching losses, making it ideal for high-frequency applications.
  • High Temperature Capability
    ​​​​High Temperature Capability
    Higher operating junction temperatures enable increased power density, with TJ ratings exceeding 175 °C.
  • High Blocking Voltage
    ​​​​High Blocking Voltage
    The high breakdown field strength of SiC enables devices to achieve voltage ratings of several kilovolts or higher
APPLICATIONS
SiC MOSFETs are well-suited for NEV traction inverters, OBCs, PV inverters, industrial power supplies, and data-center servers. With their high-frequency, high-efficiency, and high-temperature capability, they can significantly improve system efficiency, reduce losses and size, and enhance overall reliability.
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Consumer Electronics
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