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GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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XI800SP120A4S

XI800SP120A4S

Available
The 1200 V / 800 A IGBT module adopts an HPDPLUS package and a three-phase inverter topology, making it suitable for main-drive systems in electric vehicles and other new energy applications.
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
The 1200 V / 800 A IGBT power module adopts the HPDPLUS package and a three-phase inverter topology, featuring a PinFin baseplate design that delivers high power density, low parasitic inductance, and excellent thermal performance. With its high level of integration and reliability, it is particularly well-suited for hybrid and electric vehicle motor-drive inverters, as well as new-energy applications. The module helps simplify system design while enhancing overall power capability and efficiency.
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PARAMETERS
VDS[V]
1200
I[A]
800
Topology
Six-pack module
Package
A4
Status
Available
FEATURES
  • High efficiency heat dissipation
    ​​​​High efficiency heat dissipation
    PinFin baseplate with liquid cooling for superior heat dissipation efficiency
  • Low conduction losses
    ​​​​Low conduction losses
    Lower VCEsat during conduction effectively reduces conduction losses and significantly improves energy efficiency.
  • Low inductance design
    ​​​​Low inductance design
    Optimized circuit design achieves extremely low stray inductance in the module
  • Advanced chip technology
    ​​​​Advanced chip technology
    Trench-gate, field-stop IGBT technology
APPLICATIONS
The 1200 V / 800 A three-phase inverter IGBT module, leveraging the high power density and reliability of the HPDPLUS package, provides a cost-effective solution for high-power motor-drive inverters, new-energy inverters, and related systems.
Hybrid and electric vehicles (HEV/EV)
Motor-drive inverters
Renewable energy
THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
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