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GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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XI50SPRB120N2S

XI50SPRB120N2S

Available
The 1200 V / 50 A IGBT module adopts the compact Easy2B package and a PIM topology, making it suitable for medium- and high-voltage industrial control as well as new-energy applications.
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
The 1200 V / 50 A IGBT power module adopts the compact Easy2B package and a PIM (Power Integrated Module) topology, integrating rectifier, braking, and three-phase inverter functions. Featuring a baseplate-less design, it offers high power density, low losses, and strong reliability. These advantages significantly simplify the design of industrial inverters, servo drives, and related systems, while enhancing power density and overall performance.
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PARAMETERS
VDS[V]
1200
I[A]
50
Topology
PIM
Package
N2
Status
Available
FEATURES
  • Better capability to handle short circuits
    ​​​​Better capability to handle short circuits
    10 µs short-circuit withstand capability for harsh operating environments
  • Low loss design
    ​​​​Low loss design
    Lower VCEsat during conduction effectively reduces conduction losses and significantly improves energy efficiency.
  • Excellent thermal stability
    ​​​​Excellent thermal stability
    Enhanced heat-conduction paths and lower thermal resistance deliver superior performance in high-temperature environments
APPLICATIONS
The 1200 V / 50 A IGBT module adopts the Easy 2B package and a PIM topology, providing a cost-effective, compact, and efficient solution for industrial inverters, servo drives, and UPS systems, achieving an excellent balance between performance and cost.
General-purpose inverters
Variable-frequency drives (VFDs)
Industrial motor drivers
Uninterruptible power supplies (UPS)
THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
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