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GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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XI100SPRB120N4S

XI100SPRB120N4S

Available
The 1200 V / 100 A IGBT module adopts the EconoPIM 3 package, making it suitable for medium- and high-voltage industrial control as well as new-energy applications.
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
The 1200 V / 100 A IGBT power module adopts the EconoPIM 3 package, integrating rectifier, braking, and three-phase inverter functions. With low conduction loss, an optimized thermal design, and an integrated NTC temperature sensor, it ensures high power density and reliability. Its high level of integration simplifies the design of industrial applications such as inverters, servo drives, and converters, effectively increasing system power density while reducing overall cost and size.
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PARAMETERS
VDS[V]
1200
I[A]
100
Topology
PIM
Package
N4
Status
Available
FEATURES
  • High blocking voltage
    ​​​​High blocking voltage
    Designed to meet the requirements of high-power and high-voltage operating environments
  • Low loss design
    ​​​​Low loss design
    Lower VCEsat during conduction effectively reduces conduction losses and significantly improves energy efficiency.
  • Excellent thermal stability
    ​​​​Excellent thermal stability
    Enhanced heat-conduction paths and lower thermal resistance deliver superior performance in high-temperature environments
APPLICATIONS
The 1200 V / 100 A IGBT module adopts the EconoPIM 3 package with an integrated PIM topology, offering both high power density and excellent cost performance. It is widely used in industrial inverters, servo drives, converters, and new-energy applications, significantly simplifying system design and reducing overall cost.
General-purpose inverters
Motor drives
Servo drives
Uninterruptible power supplies (UPS)
THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
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