PRODUCTS
POWER SEMICONDUCTORS
GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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X3G6527A5D

X3G6527A5D

Available
X3G6527A5D High-Frequency QR Controller with Integrated GaN and Wide VCC Range
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
X3G6515A5D is a high-frequency QR controller optimized for PD and fast-charging applications. Its wide VCC operating voltage range (9 V to 85 V) enables it to support PD/PPS applications across an output range of 3.3 V to 21 V without the need for an additional VCC auxiliary winding or linear drop-down circuitry.
PARAMETERS
VDS [V]
700
IDS[A]@25℃
5
VGS-max[V]
QR
VGS(th)[V]@25℃
130
RDS(on)[mΩ]@VGS=6V
270
Qg[nC]
9-85
Qr[nC]
0
Package
DFN5*6
Reliability
Industrial-grade
Status
Available
FEATURES
  • Low-loss design
    ​​​​Low-loss design
    Extremely low gate capacitance and fast two-dimensional electron gas (2DEG) transport characteristics
  • High-frequency characteristics
    ​​​​High-frequency characteristics
    GaN HEMT High-frequency and high-speed carrier transport in the two-dimensional electron gas (2DEG) channel of GaN HEMTs
  • No reverse recovery
    ​​​​No reverse recovery
    GaN HEMTs feature unipolar conduction with no reverse-recovery process
APPLICATIONS
The 650 V / 270 mΩ GaN HEMT co-packaged with a driver IC adopts a DFN5×6 package, combining high-frequency, high-efficiency performance with high power density. It is particularly well-suited for applications such as fast chargers and solar inverters. By simplifying design through integration, it significantly improves energy efficiency and reduces system cost, enabling upgrades of compact power supply solutions.
5 W AC/DC PD adapters
High power-density power supplies
AC/DC adapters and battery chargers
THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
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