PRODUCTS
POWER SEMICONDUCTORS
GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
LATEST PRODUCT NEWS
APPLICATIONS
MANUFACTURING
QUALITY
COMPANY
CN
  • 12
CONTACT US
X3G65045ATL

X3G65045ATL

Available
TOLT-packaged 650 V / 45 mΩ GaN HEMT, providing an ideal solution for high-efficiency fast chargers and server power supplies.
CONSULT OUR TECHNICAL TEAM
APPLY FOR A SAMPLE
OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
X3G65045ATL is a 700 V power GaN HEMT in a TOLT package. Based on p-GaN enhancement-mode (E-mode) GaN-on-silicon technology, it is a normally-off discrete device. The device supports both soft-switching and hard-switching operation at very high frequencies while maintaining high efficiency. In addition, advanced packaging techniques are employed to achieve low thermal resistance and superior device performance.
Download Datasheet
PARAMETERS
VDS [V]
700
IDS[A]@25℃
36
VGS-max[V]
-15 to 7
VGS(th)[V]@25℃
16
RDS(on)[mΩ]@VGS=6V
43
Qg[nC]
7.7
Qr[nC]
0
Package
TOLT
Reliability
Industrial-grade
Status
Available
FEATURES
  • No reverse recovery
    ​​​​No reverse recovery
    GaN HEMTs feature unipolar conduction with no reverse-recovery process
  • Low-loss design
    ​​​​Low-loss design
    Extremely low gate capacitance and fast two-dimensional electron gas (2DEG) transport characteristics
  • High-frequency characteristics
    ​​​​High-frequency characteristics
    GaN HEMT High-frequency and high-speed carrier transport in the two-dimensional electron gas (2DEG) channel of GaN HEMTs
APPLICATIONS
This product is suitable for PD fast chargers, server power supplies, and industrial drives. Its high-frequency performance improves efficiency and power density, while the TOLT package enhances thermal performance and cost effectiveness, achieving a balance between high performance and high value.
Switch-mode power supplies
PC and server power supplies
Adapters and fast chargers
5G power supplies
THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
WE ARE ALWAYS HERE TO SUPPORT YOU. WE HELP TURN YOUR CHALLENGES INTO OUR OPPORTUNITIES FOR GROWTH AND SUCCESS. CONTACT US ANYTIME TO START THE CONVERSATION.
CONTACT OUR TECHNICAL TEAM
APPLY FOR A SAMPLE
CONTACT US
CONTACT CUSTOMER SUPPORT
CONTACT CUSTOMER SUPPORT
CUSTOMIZE A DEMO
CUSTOMIZE A DEMO