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GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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X3G6509B8

X3G6509B8

Available
650 V / 90 mΩ GaN HEMT in an ultracompact DFN8×8 package, enabling high-frequency, high-efficiency power conversion.
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
X3G6509B8 is a 700 V power GaN HEMT in a DFN8×8 package, featuring dual-gate pins. Based on p-GaN enhancement-mode (E-mode) GaN-on-silicon technology, it is a normally-off discrete device. The device supports both soft-switching and hard-switching operation at very high frequencies while maintaining high efficiency. In addition, our patented dual-gate-pin structure is designed to further enhance switching performance and provide greater flexibility in PCB layout. Advanced packaging techniques are employed to achieve low thermal resistance and superior device performance.
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PARAMETERS
VDS [V]
700
IDS[A]@25℃
20
VGS-max[V]
-15 to 7
VGS(th)[V]@25℃
1.6
RDS(on)[mΩ]@VGS=6V
82
Qg[nC]
3.9
Qr[nC]
0
Package
DFN8*8
Reliability
Industrial-grade
Status
Available
FEATURES
  • Low-loss design
    ​​​​Low-loss design
    Extremely low gate capacitance and fast two-dimensional electron gas (2DEG) transport characteristics
  • No reverse recovery
    ​​​​No reverse recovery
    GaN HEMTs feature unipolar conduction with no reverse-recovery process
  • High-frequency characteristics
    ​​​​High-frequency characteristics
    GaN HEMT High-frequency and high-speed carrier transport in the two-dimensional electron gas (2DEG) channel of GaN HEMTs
APPLICATIONS
For the 650 V / 90 mΩ GaN HEMT product in a DFN8×8 package, write a product application description within 60 Chinese characters, covering advantages across different application fields as well as cost and other relevant factors.
Switch-mode power supplies
PC and server power supplies
Adapters and fast chargers
5G power supplies
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