X3G6515B8
Available
650 V / 150 mΩ GaN HEMT in an ultracompact DFN8×8 package, enabling high-frequency, high-efficiency power conversion.
OVERVIEW
X3G6515B8是一款700V功率GaN HEMT，封装形式为DFN8*8，具有双栅极引脚。基于p-GaN增强模式(E-mode)的GaN-on-silicon技术，它是一款常态下导通且独立的器件。该器件可以在非常高的频率下进行软开关和硬开关操作，同时仍能实现高效率。此外，我们专利的双栅极引脚结构旨在进一步提升开关性能，并在PCB布局上提供灵活性。先进的封装方法被采用，以实现低热阻和高器件性能。
PARAMETERS
VDS [V]
700
IDS[A]@25℃
13
VGS-max[V]
-15 to 7
VGS(th)[V]@25℃
1.6
RDS(on)[mΩ]@VGS=6V
150
Qg[nC]
1.6
Qr[nC]
0
Package
DFN8*8
Reliability
Industrial-grade
Status
Available
FEATURES
-
Low-loss designExtremely low gate capacitance and fast two-dimensional electron gas (2DEG) transport characteristics -
High-frequency characteristicsGaN HEMT High-frequency and high-speed carrier transport in the two-dimensional electron gas (2DEG) channel of GaN HEMTs -
No reverse recoveryGaN HEMTs feature unipolar conduction with no reverse-recovery process
APPLICATIONS
This 650 V / 150 mΩ GaN HEMT, packaged in a compact DFN8×8 form factor, delivers higher power density and efficiency for fast chargers, server power supplies, and on-board chargers (OBC). By enabling higher switching frequencies, it reduces peripheral components and lowers overall system cost.
Switch-mode power supplies
PC and server power supplies
Adapters and fast chargers
5G power supplies
