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GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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X3G6515A8

X3G6515A8

Available
650 V / 150 mΩ GaN HEMT in an ultracompact DFN8×8 package, enabling high-frequency, high-efficiency power conversion.
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OVERVIEW
PARAMETERS
FEATURES
APPLICATIONS
OVERVIEW
X3G6515A8 is a 700 V power GaN HEMT in a DFN8×8 package. Based on p-GaN enhancement-mode (E-mode) GaN-on-silicon technology, it is a normally-off discrete device. It supports both soft-switching and hard-switching operation at very high frequencies while maintaining high efficiency. Advanced packaging techniques are also employed to achieve low thermal resistance and superior device performance.
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PARAMETERS
VDS [V]
700
IDS[A]@25℃
13
VGS-max[V]
-15 to 7
VGS(th)[V]@25℃
1.6
RDS(on)[mΩ]@VGS=6V
150
Qg[nC]
1.6
Qr[nC]
0
Package
DFN8*8
Reliability
Industrial-grade
Status
Available
FEATURES
  • High-frequency characteristics
    ​​​​High-frequency characteristics
    GaN HEMT High-frequency and high-speed carrier transport in the two-dimensional electron gas (2DEG) channel of GaN HEMTs
  • No reverse recovery
    ​​​​No reverse recovery
    GaN HEMTs feature unipolar conduction with no reverse-recovery process
  • Low-loss design
    ​​​​Low-loss design
    Extremely low gate capacitance and fast two-dimensional electron gas (2DEG) transport characteristics
APPLICATIONS
This 650 V / 150 mΩ GaN HEMT, housed in a compact DFN8×8 package, delivers higher power density and efficiency for fast chargers, server power supplies, and on-board chargers (OBC). By enabling higher switching frequencies, it reduces peripheral components and lowers overall system cost.
Switch-mode power supplies
PC and server power supplies
Adapters and fast chargers
5G power supplies
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