1. 目前主流的氮化镓工艺仍然使用0.5 um特征尺寸和6寸或8寸外延晶圆
2. 就氮化镓模拟IC而言，技术节点基本上相当于20多年前的硅BCD工艺
3. 然而氮化镓工艺不包含P-型HEMT，无论是高压（650V）还是低压（<20V）的HEMT管
4. 目前的GaN IC只能使用所谓的Direct-Coupled FET Logic (DCFL)，利用现有的E-mode和D-mode器件或者在模拟IC设计中，只用E-mode器件
5. 正如20年前的硅BCD工艺，氮化镓模拟IC工艺也能提供低压二极管，MIM电容及2DEG电阻等

Source: Kevin J. Chen, Oliver Häberlen, Alex Lidow, Chun lin Tsai, Tetsuzo Ueda, Yasuhiro Uemoto and Yifeng Wu, GaN-on-Si Power Technology:, Devices and Applications IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 3, MARCH 2017

Gaofei Tang1, M.-H. Kwan2, Zhaofu Zhang1, Jiabei He1, Jiacheng Lei1, R.-Y. Su2, F.-W. Yao2, Y.-M. Lin2, J.-L. Yu2, Thomas Yang2, Chan-Hong Chern2, Tom Tsai2, H. C. Tuan2, Alexander Kalnitsky2, and Kevin J. Chen1, High-Speed, High-Reliability GaN Power Device with Integrated Gate Driver; Proceedings of the 30th International Symposium on Power Semiconductor Devices & ICs May 13-17, 2018, Chicago, USA